Moldova standards PDF
Semiconductor devices - Discrete devices - Part 7- Bipolar transistors - Section Two- Blank detail specification for case-rated bipolar transistors for low-frequency amplification. CEI/IEC 60747-7-2:1989. Original standard IEC 60747-7-2-1989 in PDF full version. Additional info + preview on request
Document status: Withdrawn
Semiconductor devices - Discrete devices - Part 7- Bipolar transistors. IEC 60747-7:2010-12+AMD1:2019-09 CSV(en-fr). Original standard IEC 60747-7-2019 in PDF full version. Additional info + preview on request
Document status: Active
Semiconductor devices - Discrete devices - Part 7- Bipolar transistors - Section three- Blank detail specification for bipolar transistors for switching applications. CEI/IEC 747-7-3:1991. Original standard IEC 60747-7-3-1991 in PDF full version. Additional info + preview on request
Document status: Withdrawn
Semiconductor devices - Discrete devices - Part 7- Bipolar transistors - Section Four- Blank detail specification for case-rated bipolar transistors for high-frequency amplification. CEI/IEC 747-7-4:1991. Original standard IEC 60747-7-4-1991 in PDF full version. Additional info + preview on request
Document status: Withdrawn
Semiconductor devices - Discrete devices - Part 7-5- Bipolar transistors for power switching applications. IEC 60747-7-5:2005. Original standard IEC 60747-7-5-2005 in PDF full version. Additional info + preview on request
Document status: Replaced by St IEC 60747-7-2019
Semiconductor devices - Discrete devices - Part 8- Field-effect transistors - Section One- Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz. CEI/IEC 60747-8-1:1987. Original standard IEC 60747-8-1-1987 in PDF full version. Additional info + preview on request
Document status: Withdrawn